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VS-ST330SPBF Datasheet, PDF (3/8 Pages) Vishay Siliconix – Designed and qualified for industrial level
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TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
VS-ST330SPbF Series
Vishay Semiconductors
SYMBOL
PGM
PG(AV)
IGM
+VGM
-VGM
IGT
VGT
IGD
VGD
TEST CONDITIONS
VALUES
UNITS
TYP. MAX.
TJ = TJ maximum, tp  5 ms
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp  5 ms
TJ = TJ maximum, tp  5 ms
10.0
W
2.0
3.0
A
20
V
5.0
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C
200 -
Maximum required gate trigger/ 100 200 mA
current/voltage are the lowest 50
-
value which will trigger all units 2.5
-
12 V anode to cathode applied 1.8
3
V
1.1 -
Maximum gate current/voltage
not to trigger is the maximum
10
mA
TJ = TJ maximum value which will not trigger any
unit with rated VDRM anode to
cathode applied
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction temperature range
TJ
Maximum storage temperature range
TStg
Maximum thermal resistance, junction to case
RthJC
DC operation
Maximum thermal resistance, case to heatsink RthC-hs Mounting surface, smooth, flat and greased
Mounting torque, ± 10 %
Non-lubricated threads
Approximate weight
Case style
See dimension - link at the end of datasheet
VALUES UNITS
-40 to +125
°C
-40 to +150
0.10
K/W
0.03
48.5
(425)
N·m
(lbf · in)
535
g
TO-209AE (TO-118)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
180°
0.011
0.008
120°
0.013
0.014
90°
0.017
60°
0.025
0.018
0.026
TJ = TJ maximum
30°
0.041
0.042
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
K/W
Revision: 01-Mar-17
3
Document Number: 94409
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