VS-ST330SPBF Datasheet, PDF (1/8 Pages) Vishay Siliconix – Designed and qualified for industrial level

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VS-ST330SPbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 330 A
TO- 209AE (TO-118)
PRODUCT SUMMARY
I_T(AV)
V_DRM/V_RRM
V_TM
I_GT
T_J
Package
Diode variation
330 A
400 V, 2000 V
1.52 V
200 mA
-40 °C to 125 °C
TO-209AE (TO-118)
Single SCR
FEATURES
• Center amplifying gate
• International standard case TO-209AE (TO-118)
• Hermetic metal case with ceramic insulator
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
I_T(AV)
I_T(RMS)
I_TSM
I²t
V_DRM/V_RRM
t_q
T_J
T_C
50 Hz
60 Hz
50 Hz
60 Hz
Typical
VALUES
330
75
520
9000
9420
405
370
400 to 2000
100
-40 to +125
UNITS
A
°C
A
kA²s
V
µs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
VS-ST330S
12
16
20
V_DRM/V_RRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
400
800
1200
1600
2000
V_RSM, MAXIMUM
I_DRM/I_RRM MAXIMUM AT
NON-REPETITIVE PEAK VOLTAGE T_J = T_J MAXIMUM
V
mA
500
900
1300
50
1700
2100
Revision: 01-Mar-17
1
Document Number: 94409
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000