VS-P105W Datasheet, PDF (3/7 Pages) International Rectifier – PASSIVATED ASSEMBLED CIRCUIT ELEMENTS

Blocking
Parameter
dv/dt Maximum critical rate of rise of
I_RRM
I_DRM
I_RRM
off-state voltage
Max. peak reverse and off-state
leakage current at V_RRM, V_DRM
Max peak reverse leakage current
V_INS RMS isolation voltage
Triggering
Parameter
P_GM Maximum peak gate power
P_G(AV) Maximum average gate power
I_GM Maximum peak gate current
- V_GM Maximum peak negative
gate voltage
V_GT Maximum gate voltage required
to trigger
I_GD Maximum gate current
required to trigger
V_GD Maximum gate voltage
that will not trigger
I_GD Maximum gate current
that will not trigger
P100 Series
Bulletin I27125 rev. A 04/99
P100
200
10
100
2500
Units Conditions
V/µs T_J = 125°C, exponential to 0.67 V_DRM gate open
mA T_J = 125°C, gate open circuit
µA T_J = 25°C
50Hz, circuit to base, all terminal shorted,
V
T_J = 25°C, t = 1s
P100
8
2
2
10
3
2
1
90
60
35
0.2
2
Units Conditions
W
A
V _{TJ = - 40°C}
T_J = 25°C
T_J = 125°C
T_J = - 40°C
mA T_J = 25°C
T_J = 125°C
Anode Supply = 6V resistive load
Anode Supply = 6V resistive load
V T_J = 125°C, rated V_DRM applied
mA T_J = 125°C, rated V_DRM applied
Thermal and Mechanical Specification
Parameter
P100
T_J Max. operating temperature range
T_stg Max. storage temperature range
R Max. thermal resistance,
thJC
junction to case
R Max. thermal resistance,
thCS
case to heatsink
T
Mounting torque, base to heatsink
-40 to 125
-40 to 125
2.24
0.10
4
wt Approximate weight
58 (2.0)
Units Conditions
°C
K/W DC operation per junction
K/W Mounting surface, smooth and greased
Nm ^{A mounting compound is recommended and the torque}
should be checked after a period of 3 hours to allow for the
spread of the compound
g (oz)
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