VS-P105W Datasheet, PDF (2/7 Pages) International Rectifier – PASSIVATED ASSEMBLED CIRCUIT ELEMENTS

P100 Series
Bulletin I27125 rev. A 04/99
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
P101, P121, P131
V_RRM maximum repetitive V_RSM maximum non-
peak reverse voltage repetitive peak reverse
voltage
V
V
V_DRM maximum
repetitive peak off-state
voltage
V
400
500
400
P102, P122, P132
600
700
600
P103, P123, P133
800
900
800
P104, P124, P134
1000
1100
1000
P105, P125, P135
1200
1300
1200
I_RRM max.
@ T_J max.
mA
10
On-state Conduction
Parameter
I_D
Maximum DC output current
I
Max. peak one-cycle
TSM
I_FSM non-repetitive on-state
or forward current
I²t
Maximum I²t for fusing
I²âˆšt Maximum I²âˆšt for fusing
V_T(TO) Max. value of threshold voltage
r _t1
Max. level value of on-state
slope resistance
V_TM Max. peak on-state or
V
forward voltage drop
FM
di/dt Maximum non repetitive rate of
rise of turned on current
I
Maximum holding current
H
I_L
Maximum latching current
P100
25
357
375
300
315
637
580
450
410
6365
0.82
12
1.35
200
130
250
Units Conditions
A @ T_C = 85°C, full bridge
t = 10ms No voltage
t = 8.3ms reapplied
A
t = 10ms 100% V_RRM
t = 8.3ms reapplied Sinusoidal half wave,
A²s
A²âˆšs
t = 10ms
t = 8.3ms
No voltage
reapplied
Initial T_J = T_J max.
t = 10ms
t = 8.3ms
100% V
RRM
reapplied
t = 0.1 to 10ms, no voltage reapplied
I²t for time tx = I²âˆšt ^. √tx
V
T_J = 125°C
mΩ
T
J
=
125°C,
Av.
power
=
V_T(TO)
*
I_T(AV)
+
r_t
+
(I
)²
T(RMS)
V
T_J = 25°C, I_TM = π x I_T(AV)
A/µs
mA
mA
T_J = 125°C from 0.67 V_DRM
I_TM = π x I_T(AV), I_g = 500mA, tr < 0.5µs, tp > 6µs
T = 25°C anode supply = 6V, resistive load, gate open
J
T_J = 25°C anode supply = 6V, resistive load
2
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