VS-MBRS190-M3 Datasheet, PDF (3/8 Pages) Vishay Siliconix – High Performance Schottky Rectifier

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VS-MBRS190-M3, VS-MBRS1100-M3
Vishay Semiconductors
10
T_J = 175 °C
1
0.1 ^TJ ^{= 125 °C}
0.01
0.001
T_J = 75 °C
T_J = 150 °C
T_J = 100 °C
T_J = 50 °C
0.0001
T_J = 25 °C
0.00001
0
20
40
60
80
100
V_R - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
T_J = 175 °C
T_J = 125 °C
T_J = 25 °C
1
0.1
0.2
0.4
0.6
0.8
1.0
V_FM - Forward Voltage Drop (V)
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
100
T_J = 25 °C
10
0
20
40
60
80
100
V_R - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
100
10
1
0.1
0.00001
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t₁/t₂
2. Peak T_J = P_DM x Z_thJC + T_C
.
0.0001
0.001
0.01
0.1
1
10
100
t₁ - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z_thJC Characteristics (Per Leg)
Revision: 26-Aug-14
3
Document Number: 95744
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