VS-MBRS190-M3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – High Performance Schottky Rectifier

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VS-MBRS190-M3, VS-MBRS1100-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
V_FM ⁽¹⁾
Maximum reverse leakage current
See fig. 2
I_RM ⁽¹⁾
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
C_T
L_S
dV/dt
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
TEST CONDITIONS
T_J = 25 °C
1A
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
VALUES
0.78
0.62
0.5
1.0
42
2.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance, 
junction to lead
Maximum thermal resistance, 
junction to ambient
T_J ⁽¹⁾, T_Stg
R_thJL ⁽²⁾
R_thJA
DC operation
See fig. 4
DC operation
Approximate weight
Marking device
Case style SMB (similar to DO-214AA)
Notes
(1) ^d----P-----t_-^o_---^t _{< ------1-------- thermal runaway condition for a diode on its own heatsink}
dT_J R_thJA
(2) _{Mounted 1" square PCB}
VALUES
-55 to +175
UNITS
°C
36
°C/W
80
0.10
g
0.003
oz.
19/10
Revision: 26-Aug-14
2
Document Number: 95744
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