VS-MBRS130-M3 Datasheet, PDF (3/7 Pages) Vishay Siliconix – High Performance Schottky Rectifier

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1000
T_J = 25 °C
100
10
0
10
20
30
V_R - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
130
DC
120
110
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
100
90 _{Square wave (D = 0.50)}
Rated V_R applied
80
See note (1)
70
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I_F(AV) - Average Forward Current (A)
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;ï€} 
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6); 
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = 80 % rated V_R
VS-MBRS130-M3
Vishay Semiconductors
0.5
D = 0.20
D = 0.25
0.4
D = 0.33
D = 0.50
D = 0.75
0.3
DC
0.2
RMS limit
0.1
0
0
0.4
0.8
1.2
1.6
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
1000
100
At any rated load condition
and with rated V_RRM applied
following surge
10
10
100
1000
10 000
t_p - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Revision: 03-Feb-15
3
Document Number: 95746
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