VS-MBRS130-M3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – High Performance Schottky Rectifier

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VS-MBRS130-M3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
V_FM ⁽¹⁾
Maximum reverse leakage current
I_RM ⁽¹⁾
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
C_T
L_S
dV/dt
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
TEST CONDITIONS
1A
T_J = 25 °C
2A
1A
T_J = 125 °C
2A
T_J = 25 °C
T_J = 100 °C
V_R = Rated V_R
T_J = 125 °C
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
VALUES
0.420
0.470
0.300
0.370
0.5
5.0
15
200
2.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
T_J ⁽¹⁾
Maximum storage temperature range
Maximum thermal resistance, 
junction to lead
Maximum thermal resistance, 
junction to ambient
T_Stg
R_thJL ⁽²⁾
R_thJA
DC operation
Approximate weight
Marking device
Case style SMB (similar to DO-214AA)
Notes
(1) ^d----P-----t_-^o_---^t _{< ------1-------- thermal runaway condition for a diode on its own heatsink}
dT_J R_thJA
(2) _{Mounted 1" square PCB}
VALUES
-55 to +125
-55 to +150
UNITS
°C
25
°C/W
80
0.10
g
0.003
oz.
13
10
T_J = 125 °C
1
T_J = 25 °C
10
1
0.1
0.01
0.001
T_J = 125 °C
T_J = 100 °C
T_J = 75 °C
T_J = 50 °C
T_J = 25 °C
0.1
0
0.2
0.4
0.6
0.8
V_FM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0.0001
0
10
20
30
V_R - Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
Revision: 03-Feb-15
2
Document Number: 95746
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