VS-MBR150 Datasheet, PDF (3/7 Pages) Vishay Siliconix – Schottky Rectifier,

VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3
www.vishay.com
Vishay Semiconductors
10
1
T_J = 150 °C
T_J = 125 °C
T_J = 25 °C
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
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V_FM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
10
T_J = 150 °C
1
T_J = 125 °C
0.1
0.01
0.001
T_J = 25 °C
0.0001
0 10 20 30 40 50 60 70
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V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
T_J = 25 °C
160
140
120
DC
100
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
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I_F(AV) - Average Forward Current (A)
Fig. 4 - Maximum Ambient Temperature vs.
Average Forward Current, Printed Circuit Board Mounted
1
0.8
0.6
RMS Limit
0.4
0.2
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
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Average Forward Current - I_F(AV) (A)
Fig. 5 - Forward Power Loss Characteristics
1000
At Any Rated Load Condition
And With rated V_RRM Applied
Following Surge
100
10
0 10 20 30 40 50 60 70
10
10
100
1000
10 000
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V_R - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
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t_p - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;}
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6); Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = 80 % rated V_R
Revision: 20-Sep-11
3
Document Number: 93439
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