VS-MBR150 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Schottky Rectifier,

VS-MBR150, VS-MBR150-M3, VS-MBR160, VS-MBR160-M3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
V_FM ⁽¹⁾
Maximum reverse leakage current
See fig. 2
I_RM ⁽¹⁾
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
C_T
L_S
dV/dt
Note
(1) _{Pulse width < 300 μs, duty cycle < 2 %}
TEST CONDITIONS
1A
2A
T_J = 25 °C
3A
1A
2A
T_J = 125 °C
3A
T_J = 25 °C
T_J = 100 °C
V_R = Rated V_R
T_J = 125 °C
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
VALUES
0.75
0.9
1.0
0.65
0.75
0.82
0.5
5
10
55
8.0
10 000
UNITS
V
mA
pF
nH
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
T_J ⁽¹⁾, T_Stg
Maximum thermal resistance,
junction to lead
R_thJL ⁽²⁾
DC operation
See fig. 4
TEST CONDITIONS
Approximate weight
Marking device
Case style DO-204AL (DO-41)
Notes
(1) ^d----P-----t_-^o_---^t _{< ------1-------- thermal runaway condition for a diode on its own heatsink}
dT_J R_thJA
(2) _{Mounted 1" square PCB, thermal probe connected to lead 2 mm from package}
VALUES
- 40 to 150
UNITS
°C
80
°C/W
0.33
g
0.012
oz.
MBR150
MBR160
Revision: 20-Sep-11
2
Document Number: 93439
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