VS-HFA180NH40PBF Datasheet, PDF (3/7 Pages) Vishay Siliconix – Designed and qualified for industrial level

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10 000
1000
T_J = 25 °C
100
1
10
100
1000
V_R - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
160
140
120
100
DC
80
60
40
20
0
0
100
200
300
400
500
I_F(AV) - DC Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature vs.
DC Forward Current
400
T_J = 125 °C
350
T_J = 25 °C
I_F = 200 A
300
I_F = 180 A
I_F = 70 A
250
200
150
100
50
0
100
1000
dI_F/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI_F/dt
VS-HFA180NH40PbF
Vishay Semiconductors
80
70
T_J = 125 °C
T_J = 25 °C
60
50
I_F = 200 A
I_F = 180 A
40 ^{IF = 70 A}
30
20
10
0
100
1000
dI_F/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI_F/dt
6000
5000
T_J = 125 °C
T_J = 25 °C
4000
3000
I_F = 200 A
I_F = 180 A
I_F = 70 A
2000
1000
0
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI_F/dt
10 000
1000
200 A
180 A
70 A
100
100
T_J = 125 °C
T_J = 25 °C
1000
dI_F/dt (A/µs)
Fig. 8 - Typical dI_(rec)M/dt vs. dI_F/dt
Revision: 19-Mar-15
3
Document Number: 94061
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