VS-HFA180NH40PBF Datasheet, PDF (2/7 Pages) Vishay Siliconix – Designed and qualified for industrial level

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VS-HFA180NH40PbF
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5
T_J = 25 °C
t_rr
T_J = 125 °C
-
90
-
280
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
I_RRM
Q_rr
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 135 A
dI_F/dt = 200 A/μs
V_R = 200 V
-
9
-
18
-
300
-
2650
Peak rate of recovery current
See fig. 8
dI_(rec)M/dt
T_J = 25 °C
T_J = 125 °C
-
300
-
290
MAX.
140
440
16
32
950
6300
-
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum junction and storage
temperature range
Maximum thermal resistance, 
junction to case
Typical thermal resistance, 
case to heatsink
T_J, T_Stg
R_thJC
R_thCS
DC operation
See fig. 4
Mounting surface, smooth and greased
-55 to +150
0.19
0.05
30
Approximate weight
1.06
Mounting torque
minimum
maximum
3 (26.5)
4 (35.4)
Terminal torque
minimum
maximum
3.4 (30)
5 (44.2)
Case style
HALF-PAK module
UNITS
°C
°C/W
g
oz.
N·m
(lbf · in)
1000
100
T_J = 150 °C
10
T_J = 125 °C
T_J = 25 °C
1
0
0.5 1.0 1.5 2.0 2.5 3.0
V_FM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
10
T_J = 150 °C
1
T_J = 125 °C
0.1
0.01
0.001
T_J = 25 °C
0.0001
100
200
300
400
V_R - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
Revision: 19-Mar-15
2
Document Number: 94061
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