VS-FA40SA50LC Datasheet, PDF (3/10 Pages) Vishay Siliconix – Low on-resistance

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VS-FA40SA50LC
Vishay Semiconductors
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
Continuous source current 
(body diode)
Pulsed source current (body diode)
I_S
I_SM ⁽¹⁾
MOSFET symbol
showing the integral reverse
G
p-n junction diode.
D
-
-
S
-
38
-
150
Diode forward voltage
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Forward turn-on time
V_SD ⁽²⁾
t_rr
I_rr
Q_rr
t_rr
I_rr
Q_rr
t_on
T_J = 25 °C, I_S = 38 A, V_GS = 0 V
T_J = 125 °C, I_S = 38 A, V_GS = 0 V
-
0.9
1.31
-
0.75
-
-
560
-
T_J = 25 °C, I_F = 40 A; dI_F/dt = 100 A/μs ⁽²⁾
-
40
-
-
11
-
-
680
-
T_J = 25 °C, I_F = 40 A; dI_F/dt = 100 A/μs ⁽²⁾
-
47
-
-
16
-
Intrinsic turn-on time is negligible (turn-on is dominated by L_S + L_D)
Notes
(1) _{Repetitive rating; pulse width limited by maximum junction temperature (see fig. 18)}
(2) _{Pulse width  300 μs, duty cycle  2 %ï€} 
UNITS
A
V
ns
A
μC
ns
A
μC
160
140
120
100
80
60
40
20
0
0
10 20 30 40 50 60
Continuous Drain-Source Current I_DS (A)
Fig. 1 - Maximum DC MOSFET Drain-Source Current vs.
Case Temperature
120
V_GS = 15 V
100
V_GS = 12 V
80
V_GS = 10 V
V_GS = 8 V
V_GS = 7 V
60
40
20
0
0
V_GS = 6 V
V_GS = 5 V
2 4 6 8 10 12 14 16 18 20
V_DS , Drain-to-Source Voltage (V)
Fig. 3 - Typical Drain-to-Source Current Output Characteristics
at T_J = 25 °C
100
10
T_J = 25 °C
T_J = 125 °C
1
T_J = 150 °C
70
60
V_GS = 15 V
V_GS = 12 V
50
V_GS = 10 V
V_GS = 8 V
V_GS = 7 V
40
V_GS = 6 V
30
V_GS = 5 V
20
10
0.1
0.1
1
10
V_DS - Drain to source Voltage (V), at V_GS = 10 V
Fig. 2 - Typical Drain-to-Source Current Output Characteristics;
V_GS = 10 V
0
0 2 4 6 8 10 12 14 16 18 20
V_DS , Drain-to-Source Voltage (V)
Fig. 4 - Typical Drain-to-Source Current Output Characteristics
at T_J = 125 °C
Revision: 01-Jun-16
3
Document Number: 94803
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