VS-FA38SA50LCP Datasheet, PDF (3/9 Pages) Vishay Siliconix – Fully isolated package

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VS-FA38SA50LCP
Vishay Semiconductors
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20μs PULSE WIDTH
1
TC = 25°C
A
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
3.0 _{ID = 38A}
2.5
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( ^°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V _{20μs PULSE WIDTH}
10
1
TJ= 150 °C
10
100
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
1000
100
T_J = 150° C
T_J = 25°C
10
V _DS= 50V
20μs PULSE WIDTH
1
4
5
6
7
8
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
16000
14000
12000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
10000
8000
C_iss
6000
4000
2000
C_oss
C_rss
0
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs.
Drain to Source Voltage
20
ID = 38A
16
V_DS = 400V
V_DS = 250V
V_DS = 100V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
80
160
240
320
400
Q_G , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs.
Gate to Source Voltage
Revision: 08-Aug-13
3
Document Number: 94547
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