VS-FA38SA50LCP Datasheet, PDF (2/9 Pages) Vishay Siliconix – Fully isolated package

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VS-FA38SA50LCP
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction and storage temperature range
Junction to case
Case to heatsink
Weight
T_J, T_Stg
R_thJC
R_thCS
Flat, greased surface
Mounting torque
Case style
SOT-227
MIN.
- 55
-
-
-
-
TYP.
-
-
0.05
30
-
MAX.
150
0.25
-
-
1.3
UNITS
°C
°C/W
g
Nm
ELECTRICAL CHARACTERISTCS (T_J = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
Static drain to source on-resistance
Gate threshold voltage
Forward transconductance
Drain to source leakage current
Gate to source forward leakage
Gate to source reverse leakage
Total gate charge
Gate to source charge
Gate to drain ("Miller") charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal source inductance
V_(BR)DSS
V_(BR)DSS/T_J
R_DS(on) ⁽¹⁾
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_S
V_GS = 0 V, I_D = 1.0 mA
Reference to 25 °C, I_D = 1 mA
V_GS = 10 V, I_D = 23 A
V_DS = V_GS, I_D = 250 μA
V_DS = 25 V, I_D = 23 A
V_DS = 500 V, V_GS = 0 V
V_DS = 400 V, V_GS = 0 V, T_J = 125 °C
V_GS = 20 V
V_GS = - 20 V
I_D = 38 A
V_DS = 400 V
V_GS = 10 V; see fig. 6 and 13 ⁽¹⁾
V_DD = 250 V
I_D = 38 A
R_g = 10
R_D = 8, see fig. 10 ⁽¹⁾
Between lead, and center of die
contact
Input capacitance
Output capacitance
Reverse transfer capacitance
C_iss
C_oss
C_rss
V_GS = 0 V
V_DS = 25 V
f = 1.0 MHz, see fig. 5
Note
(1) _{Pulse width  300 μs, duty cycle  2 %}
MIN.
500
-
-
2.0
22
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.66
-
-
-
-
-
-
-
280
37
150
42
340
200
330
5.0
6900
1600
580
MAX. UNITS
-
V
-
V/°C
0.13

4.0
V
-
S
50
μA
500
200
nA
- 200
420
55
nC
220
-
-
ns
-
-
-
nH
-
-
pF
-
SOURCE-DRAIN RATINGS AND CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
Continuous source current 
(body diode)
Pulsed source current (body diode)
I_S
I_SM ⁽¹⁾
MOSFET symbol
showing the integral reverse
G
p-n junction diode.
D
-
-
S
-
38
-
150
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Forward turn-on time
V_SD ⁽²⁾
t_rr
Q_rr
t_on
T_J = 25 °C, I_S = 38 A, V_GS = 0 V
-
-
1.3
-
830 1300
T_J = 25 °C, I_F = 38 A; dI/dt = 100 A/μs ⁽²⁾
-
15
22
Intrinsic turn-on time is negligible (turn-on is dominated by L_S + L_D)
Notes
(1) _{Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)}
(2) _{Pulse width  300 μs, duty cycle  2 %}
UNITS
A
V
ns
μC
Revision: 08-Aug-13
2
Document Number: 94547
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