VS-8EWS08S-M3 Datasheet, PDF (3/7 Pages) Vishay Siliconix – High Voltage Surface Mountable Input Rectifier Diode, 8 A

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150
8EWS. Series
140
R_thJC (DC) = 2.5 °C/W
130
Ø
Conduction angle
120
110
100
90
80
0
30°
60°
90°
120°
180°
2
4
6
8
10
12
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
150
8EWS. Series
R_thJC (DC) = 2.5 °C/W
140
130
Ø
Conduction period
120
110
100
90
0
30°
60°
90°
120° _180°
DC
2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
16
180°
14
120°
90°
12
60°
30°
10
RMS limit
8
6
Ø
Conduction angle
4
2
8EWS. Series
T_J = 150 °C
0
0
2
4
6
8
10
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
VS-8EWS08S-M3, VS-8EWS12S-M3
Vishay Semiconductors
20
DC
18
180°
16
120°
90°
14
60°
30°
12
10
RMS limit
8
Ø
6
Conduction period
4
8EWS. Series
2
T_J = 150 °C
0
0 2 4 6 8 10 12 14 16
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
140
130
120
110
100
90
80
70
60
50
40
30
1
At any rated load condition and with
rated V_rrm applied following surge.
Initial T_J = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
VS-8EWS08S .. Series
10
100
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
160
Maximum non-repetitive surge current
140
versus pulse train duration.
Initial T_J = T_J max.
No voltage reapplied
120
Rated V_rrm reapplied
100
80
60
40
VS-8EWS08S .. Series
20
0.01
0.1
1
10
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 19-Jan-17
3
Document Number: 93383
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