VS-8EWS08S-M3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – High Voltage Surface Mountable Input Rectifier Diode, 8 A

www.vishay.com
VS-8EWS08S-M3, VS-8EWS12S-M3
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Maximum peak one cycle 
non-repetitive surge current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²ïƒ–t for fusing
I²ïƒ–t
TEST CONDITIONS
T_C = 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
8
125
150
78
110
1100
UNITS
A
A²s
A²ïƒ–s
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
V_FM
r_t
V_F(TO)
Maximum reverse leakage current
I_RM
TEST CONDITIONS
8 A, T_J = 25 °C
T_J = 150 °C
T_J = 25 °C
T_J = 150 °C
V_R = Rated V_RRM
VALUES
1.1
20
0.82
0.05
0.50
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage 
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance, 
junction to ambient (PCB mount)
T_J, T_Stg
R_thJC
DC operation
R_thJA ⁽¹⁾
Approximate weight
Marking device
Case style TO-252AA (D-PAK)
Note
(1) _{When mounted on 1" square (650 mm}2_{) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/Wï€} 
For recommended footprint and soldering techniques refer to application note #AN-994
VALUES
-55 to +150
UNITS
°C
2.5
°C/W
62
1
g
0.03
oz.
8EWS08S
8EWS12S
Revision: 19-Jan-17
2
Document Number: 93383
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000