VS-19TQ015S-M3_15 Datasheet, PDF (3/7 Pages) Vishay Siliconix – High Performance Schottky Rectifier, 19 A

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10 000
1000
VS-19TQ015S-M3
Vishay Semiconductors
T_J = 25 °C
100
0
5
10
15
20
25
30
V_R - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
0.001
0.00001
Single pulse
(thermal resistance)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
P
DM
t
1
t
2
Notes:
1. Duty factor D = t₁/t_{2 .}
2. Peak T_J = P_DM x Z_thJC + T_C
0.0001
0.001
0.01
0.1
1
10
t₁ - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z_thJC Characteristics
.
100
105
19TQ015
100
R_thJC (DC) = 1.50 °C/W
95
DC
90
85
80
0
5
10
15
20
25
30
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
10
D = 0.08
D = 0.17
8 ^{D = 0.25}
D = 0.33
D = 0.50
6
4
2
DC
RMS limit
0
0
4
8 12 16 20 24 28
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 29-Jul-14
3
Document Number: 95730
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