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VS-19TQ015S-M3_15 Datasheet, PDF (1/7 Pages) Vishay Siliconix – High Performance Schottky Rectifier, 19 A
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VS-19TQ015S-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 19 A
Base
cathode
2
TO-263AB (D2PAK)
1
N/C
3
Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IRM max.
TJ max.
Diode variation
EAS
TO-263AB (D2PAK)
19 A
15 V
0.36 V
522 mA at 100 °C
125 °C
Single die
6.75 mJ
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC®-JESD47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-19TQ015S-M3 Schottky rectifier has been
optimized for ultralow forward voltage drop specifically for
the OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
19 Apk, TJ = 75 °C
Range
VALUES
19
15
700
0.32
-55 to +125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-19TQ015S-M3
15
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
SYMBOL
TEST CONDITIONS
IF(AV)
50 % duty cycle at TC = 80 °C, rectangular waveform
Maximum peak one cycle
non-repetitive surge current
See fig. 7
5 μs sine or 3 μs rect. pulse
Following any rated
IFSM
load condition and with
10 ms sine or 6 ms rect. pulse rated VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
TJ = 25 °C, IAS = 1.50 A, L = 6 mH
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 3 x VR typical
VALUES
19
700
330
6.75
1.50
UNITS
A
A
mJ
A
Revision: 29-Jul-14
1
Document Number: 95730
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000