VFT3045CBP Datasheet, PDF (3/4 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

New Product
VFT3045CBP
Vishay General Semiconductor
100
T_A = 150 °C
10
T_A = 125 °C
T_A = 100 °C
1
T_A = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100 000
10 000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
1
0.1
0.01
T_A = 150 °C
T_A = 125 °C
T_A = 100 °C
T_A = 25 °C
10
Junction to Case
1
0.001
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.404 (10.26)
0.384 (9.75)
ITO-220AB
0.076 (1.93) REF.
45° REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
PIN
123
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
Document Number: 89369 For technical questions within your region, please contact one of the following:
Revision: 27-Oct-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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