VFT3045CBP Datasheet, PDF (2/4 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

VFT3045CBP
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
I_F = 5 A
I_F = 7.5 A
I_F = 15 A
I_F = 5 A
I_F = 7.5 A
I_F = 15 A
Reverse current per diode
V_R = 45 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width ≤ 40 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
0.42
0.44
0.49
0.30
0.33
0.39
-
17
MAX.
-
-
0.57
-
-
0.48
2000
50
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
R_θJC
VFT3045CBP
6.0
4.0
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
ITO-220AB
VFT3045CBP-M3/4W
1.76
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
35
30
25
20
15
10
5
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
9
8
D = 0.5 _{D = 0.8}
D = 0.3
7
6
D = 0.2
5
4 ^{D = 0.1}
3
D = 1.0
T
2
1
D = t_p/T
t_p
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89369
[e-mail], [e-mail], [e-mail]
Revision: 27-Oct-10