VEMT2500X01 Datasheet, PDF (3/8 Pages) Vishay Siliconix – Silicon NPN Phototransistor Package form: GW, RGW

VEMT2500X01, VEMT2520X01
Silicon NPN Phototransistor _{Vishay Semiconductors}
BASIC CHARACTERISTICS
T_amb = 25 °C, unless otherwise specified
10 000
1000
I_F = 0
100
V_CE = 70 V
V_CE = 25 V
V_CE = 5 V
10
1
0
20594
10 20 30 40 50 60 70 80 90 100
T_amb - Ambient Temperature (°C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
100
10
1
V = 5 V,
CE
λ = 950 nm
0.1
0.01
0.01
0.1
1
10
21573
E_e - Irradiance (mW/cm²)
Fig. 3 - Collector Light Current vs. Irradiance
1.2
1.0
0.8
0.6
0.4
0.2
0
400 500 600 700 800 900 1000 1100
21555
λ - Wavelength (nm)
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
0° 10° 20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6 0.4 0.2 0
94 8248
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
100
90
80
70
R_L = 100 Ω
60
50
40
30
t_f
t
20 ^r
10
0
0
20599
250 500 750 1000 1250 1500 1750 2000
I_C - Collector Current (µA)
Fig. 4 - Rise/Fall Time vs. Collector Current
Document Number: 81134
Rev. 1.0, 29-Apr-09
For technical questions, contact: [e-mail]
www.vishay.com
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