VEMT2500X01 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Silicon NPN Phototransistor Package form: GW, RGW

VEMT2500X01, VEMT2520X01
Vishay Semiconductors
Silicon NPN Phototransistor
VEMT2520X01
VEMT2500X01
16758-10
DESCRIPTION
VEMT2500X01 series are silicon NPN epitaxial planar
phototransistors in a miniature dome lens, clear epoxy
package for surface mounting. The device is sensitive to
visible and near infrared radiation.
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• AEC-Q101 qualified
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 15°
• Package matched with IR emitter series
VSMB2000X01
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
• Find out more about Vishay’s Automotive Grade Product
requirements at: www.vishay.com/applications
APPLICATIONS
• Detector in automotive applications
• Photo interrupters
• Miniature switches
• Counters
• Encoders
• Position sensors
PRODUCT SUMMARY
COMPONENT
VEMT2500X01
VEMT2520X01
I_ca (mA)
6
6
Note
Test condition see table “Basic Characteristics”
ϕ (deg)
± 15
± 15
ORDERING INFORMATION
ORDERING CODE
VEMT2500X01
VEMT2520X01
Note
MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 6000 pcs, 6000 pcs/reel
MOQ: 6000 pcs, 6000 pcs/reel
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector emitter voltage
Emitter collector voltage
Collector current
Power power dissipation
TEST CONDITION
T_amb ≤ 75 °C
SYMBOL
V_CEO
V_ECO
I_C
P_V
λ_0.1 (nm)
470 to 1090
470 to 1090
PACKAGE FORM
Reverse gullwing
Gullwing
VALUE
20
7
50
100
UNIT
V
V
mA
mW
Document Number: 81134
Rev. 1.0, 29-Apr-09
For technical questions, contact: [e-mail]
www.vishay.com
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