VBT4045BP_15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier

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100
T_A = 150 °C
T_A = 125 °C
10
T_A = 100 °C
1
0.1
0.01
T_A = 25 °C
0.001
20
40
60
80
100
Percent of Rated Peak reverse Voltage (%)
Fig. 3 - Typical Reverse Characteristics
100 000
10 000
T_J = 25 °C
f = 1.0 MHz
V_stg = 50 mV_p-p
VBT4045BP
Vishay General Semiconductor
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 4 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
0.360 (9.14)
0.320 (8.13)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
1K2
0.624 (15.85)
0.591 (15.00)
0.130 (3.3)
REF.
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.047 (1.19)
0.047 (1.2) REF.
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
Mounting Pad Layout
0.42 (10.66) MIN.
0.670 (17.02)
0.591 (15.00)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.15 (3.81) MIN.
Revision: 23-Feb-12
3
Document Number: 89442
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