VBT4045BP_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier

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VBT4045BP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low V_F = 0.28 V at I_F = 5 A
TO-263AB
K
PIN 1
PIN 2
2
1
K
HEATSINK
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Compliant to RoHS Directive 2011/65/EU
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
I_F(DC)
V_RRM
I_FSM
V_F at I_F = 40 A
T_OP max. (AC mode)
T_J max. (DC forward current)
40 A
45 V
240 A
0.51 V
150 °C
200 °C
MECHANICAL DATA
Case: TO-263AB
Epoxy meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant and commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum DC forward bypassing current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
I_F(DC) ⁽¹⁾
I_FSM
Operating junction temperature range (AC mode)
T_OP
Junction temperature in DC forward current
without reverse bias, t  1 h
T_J ⁽¹⁾
Notes
(1) _{With heatsink}
(2) _{Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test}
VBT4045BP
45
40
240
- 40 to + 150
 200
UNIT
V
A
A
°C
°C
Revision: 23-Feb-12
1
Document Number: 89442
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