VB20M120C Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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New Product
VB20M120C
Vishay General Semiconductor
100
T_A = 150 °C
10
T_A = 125 °C
T_A = 100 °C
1
T_A = 25 °C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
10
T_A = 150 °C
T_A = 125 °C
1
T_A = 100 °C
0.1
0.01
0.001
T_A = 25 °C
0.0001
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
10
Junction to Case
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN
K
0.190 (4.83)
0.160 (4.06)
0.360 (9.14)
0.320 (8.13)
1K2
0.624 (15.85)
0.591(15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
PIN 1
PIN 2
K-HEATSINK
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 _MIN.
(10.66)
0.055 (1.40)
0.047 (1.19)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.670 (17.02)
0.591 (15.00)
0.08
(2.032)
MIN.
0.105 (2.67)
0.095 (2.41)
0.33
(8.38)
MIN.
0.15
(3.81) ^MIN.
Revision: 11-Jan-12
3
Document Number: 89466
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