VB20M120C Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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New Product
VB20M120C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage per diode
I_F = 5 A
I_F = 10 A
I_F = 5 A
I_F = 10 A
Reverse current per diode
V_R = 90 V
V_R = 120 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width ≤ 20 ms}
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
0.65
0.82
0.55
0.64
3
1.5
-
4
MAX.
-
0.91
-
0.72
-
-
700
25
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
R_θJC
VB20M120C
2.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-263AB
VB20M120C-E3/4W
1.37
TO-263AB
VB20M120C-E3/8W
1.37
PACKAGE CODE
4W
8W
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
RAT INGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
15
10
5
Mounted on Specific Heatsink
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
9.0
D = 0.5 ^{D = 0.8}
8.0
D = 0.3
7.0
D = 0.2
6.0
D = 0.1
D = 1.0
5.0
4.0
T
3.0
2.0
1.0
D = t_p/T
t_p
0.0
0 1 2 3 4 5 6 7 8 9 10 11 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 11-Jan-12
2
Document Number: 89466
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