V60120C_15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual High Voltage Trench MOS Barrier Schottky Rectifier

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350
T_J = T_J max.
300
8.3 ms Single Half Sine-Wave
250
200
150
100
50
0
1
10
100
Number of Cycles at 60 Hz
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
100
T_A = 150 °C
T_A = 125 °C
10
T_A = 25 °C
1
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics Per Diode
100
T_A = 150 °C
10
T_A = 125 °C
1
0.1
0.01
T_A = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Characteristics Per Diode
V60120C, VB60120C
Vishay General Semiconductor
10 000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance Per Diode
10
Junction to Case
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 7 - Typical Transient Thermal Impedance Per Diode
Revision: 17-Aug-15
3
Document Number: 88976
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