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V60120C_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual High Voltage Trench MOS Barrier Schottky Rectifier
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V60120C, VB60120C
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.41 V at IF = 5 A
TO-220AB
TMBS ®
TO-263AB
K
3
2
1
V60120C
PIN 1
PIN 2
PIN 3
CASE
2
1
VB60120C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 30 A
TJ max.
Package
2 x 30 A
120 V
300 A
0.71 V
150 °C
TO-220AB, TO-263AB
Diode variations
Dual common cathode
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy
at TJ = 25 °C, L = 100 mH per diode
Peak repetitive reverse current at tp = 2 μs, 1 kHz, 
TJ = 38 °C ± 2 °C per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
VRRM
IF(AV)
IFSM
EAS
IRRM
dV/dt
TJ, TSTG
V60120C
VB60120C
120
60
30
300
260
0.5
10 000
-40 to +150
UNIT
V
A
A
mJ
A
V/μs
°C
Revision: 17-Aug-15
1
Document Number: 88976
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000