V20120S-E3_15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Voltage Trench MOS Barrier Schottky Rectifier

V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3
www.vishay.com
Vishay General Semiconductor
100
T_A = 150 °C
T_A = 125 °C
10
T_A = 100 °C
1
T_A = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
10
1
0.1
0.01
T_A = 150 °C
T_A = 125 °C
T_A = 100 °C
T_A = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
10
Junction to Case
1
V(B,I)20120S
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
10
Junction to Case
1
VF20120S
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 7 - Typical Transient Thermal Impedance
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Revision: 11-Sep-13
3
Document Number: 88993
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