V20120S-E3_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Voltage Trench MOS Barrier Schottky Rectifier

V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage 
per diode
Reverse current per diode
I_R = 10 mA
I_F = 5 A
I_F = 10 A
I_F = 20 A
I_F = 5 A
I_F = 10 A
I_F = 20 A
V_R = 90 V
V_R = 120 V
T_A = 25 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_BR
V_F ⁽¹⁾
I_R ⁽²⁾
120 (minimum)
0.57
0.71
0.99
0.50
0.61
0.73
10
6
-
14
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
MAX.
-
-
-
1.12
-
-
0.81
-
-
300
30
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20120S VF20120S
Typical thermal resistance
R_JC
2
4
VB20120S
2
VI20120S
2
UNIT
V
V
µA
mA
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V20120S-E3/4W
1.88
ITO-220AB
VF20120S-E3/4W
1.75
TO-263AB
VB20120S-E3/4W
1.38
TO-263AB
VB20120S-E3/8W
1.38
TO-262AA
VI20120S-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
15
VF20120S
V(B,I)20120S
10
5
Mounted on Specific Heatsink
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
20
D = 0.5 ^{D = 0.8}
18
D = 0.3
16
14
D = 0.2
12
D = 0.1
10
D = 1.0
8
T
6
4
2
D = t_p/T
t_p
0
0
5
10
15
20
25
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Revision: 11-Sep-13
2
Document Number: 88993
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