V20100C_09 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
V20100C, VF20100C, VB20100C & VI20100C
Vishay General Semiconductor
100
T_A = 150 °C
T_A = 125 °C
10
T_A = 25 °C
1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
T_A = 150 °C
10
T_A = 125 °C
1
0.1
T_A = 25 °C
0.01
0.001
10
20 30 40 50 60 70 80 90 100
Instantaneous Forward Voltage (V)
Figure 4. Typical Reverse Characteristics Per Diode
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
10
Junction to Case
V(B,I)20100C
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
10
Junction to Case
VF20100C
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 7. Typical Transient Thermal Impedance Per Diode
Document Number: 88977
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
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www.vishay.com
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