V20100C_09 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
V20100C, VF20100C, VB20100C & VI20100C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage per diode
I_R = 10 mA T_A = 25 °C
V_BR
105 (minimum)
I_F = 5 A
Instantaneous forward voltage per diode ^{(1) IF = 10 A}
T_A = 25 °C
V_F
I_F = 5 A
I_F = 10 A
T_A = 125 °C
0.55
0.65
0.50
0.58
Reverse current per diode ⁽²⁾
V_R = 70 V
T_A = 25 °C
T_A = 125 °C
17
5.3
V_R = 100 V
T_A = 25 °C
T_A = 125 °C
I_R
-
12
Notes
(1) _{Pulse test: 300 µs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width ≤ 40 ms}
MAX.
-
-
0.79
-
0.68
-
-
800
25
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20100C
VF20100C
Typical thermal resistance per diode
R_θJC
2.8
5.5
VB20100C
2.8
VI20100C
2.8
UNIT
V
V
µA
mA
µA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20100C-E3/4W
1.881
ITO-220AB
VF20100C-E3/4W
1.75
TO-263AB
VB20100C-E3/4W
1.39
TO-263AB
VB20100C-E3/8W
1.39
TO-262AA
VI20100C-E3/4W
1.452
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
24
Resistive or Inductive Load
20
VF20100C
16
VI(B)20100C
12
V20100C
8
4
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = t_p/T
t_p
4
8
12
16
20
24
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
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2
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Document Number: 88977
Revision: 24-Jun-09