V15PL50_15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

www.vishay.com
8
D = 0.8
7
D = 0.5
6
D = 0.3
D = 1.0
5
D = 0.2
4
3
D = 0.1
2
1
0
0 2 4 6 8 10 12 14 16 18
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
100
T_A = 150 °C
10
T_A = 125 °C
1
T_A = 100 °C
T_A = 25 °C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1000
100
T_A= 150 °C
T_A= 125 °C
10
T_A= 100 °C
1
0.1
T_A= 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
V15PL50
Vishay General Semiconductor
10 000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 02-Jul-13
3
Document Number: 87990
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000