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V15PL50_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
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V15PL50
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current
IF = 5.0 A
IF = 7.5 A
IF = 15 A
IF = 5.0 A
IF = 7.5 A
IF = 15 A
VR = 35 V
VR = 50 V
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
0.40
0.42
0.49
0.28
0.31
0.40
35
20
-
35
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  5 ms
MAX.
-
-
0.57
-
-
0.48
-
-
800
80
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V15PL50
Typical thermal resistance
RJA (1)(2)
70
RJM (3)
4
Notes
(1) Free air, mounted on recommended copper pad area; thermal resistance RJA - junction to ambient
(2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA
(3) Mounted on 30 mm x 30 mm 2 oz. pad PCB; thermal resistance RJM - junction to mount measured at cathode side
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
V15PL50-M3/86A
0.10
86A
V15PL50-M3/87A
0.10
87A
BASE QUANTITY
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
18
16
TM = 124 °C, RthJM = 4 °C/W
14
12
10
8
TA = 25 °C, RthJA = 70 °C/W
6
4
2
TM measured at cathode side
0
0
25 50
75 100
125 150
Mount Temperature (°C) (D = duty cycle = 0.5)
Fig. 1 - Maximum Forward Current Derating Curve
Notes
(1) Mounted on 30 mm x 30 mm aluminum PCB; TM measured
at the terminal of cathode band (RJM = 4 °C/W)
(2) Free air, mounted on recommended copper pad area
(RJA = 70 °C/W)
Revision: 02-Jul-13
2
Document Number: 87990
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000