V10P10_15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – MOS Barrier Schottky Rectifier Ultra Low

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V10P10
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise specified)
12
Resistive or Inductive Load
10
8
6
4
2 T_L measured
at the Cathode Band Terminal
0
0
25 50 75 100 125 150 175
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
T_A = 150 °C
10
1
T_A = 125 °C
0.1
0.01
T_A = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
8
D = 0.3 _{D = 0.5} ^{D = 0.8}
7
D = 0.2
6
D = 0.1
5
D = 1.0
4
3
T
2
1
D = t_p/T
t_p
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
10 000
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
T_A = 150 °C
10
T_A = 125 °C
1
0.1
T_A = 25 °C
0.01
0
0.2
0.4
0.6
0.8
1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 16-Dec-14
3
Document Number: 89006
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