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| V10P10_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – MOS Barrier Schottky Rectifier Ultra Low | |||
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www.vishay.com
V10P10
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage
Reverse current
IR = 1 mA
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
VR = 70 V
VR = 100 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF (1)
IR (2)
100 (minimum)
0.512
0.625
0.453
0.574
7.1
4.5
30.4
10.4
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ï£ 40 ms
MAX.
-
-
0.68
-
0.62
-
-
150
20
UNIT
V
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
V10P10
Typical thermal resistance
Rï±JA (1)
60
Rï±JL
3
Note
(1) Units mounted on recommended PCB 1 oz. pad layout
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
V10P10-M3/86A
0.10
V10P10-M3/87A
V10P10HM3/86A (1)
V10P10HM3/87A (1)
0.10
0.10
0.10
V10P10HM3_A/H (1)
V10P10HM3_A/I(1)
0.10
0.10
Note
(1) AEC-Q101 qualified
PACKAGE CODE
86A
87A
86A
87A
H
I
BASE QUANTITY
1500
6500
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 16-Dec-14
2
Document Number: 89006
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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