V10D120C-M3 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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100
T_A = 150 °C
10 TA = 125 °C
T_A = 100 °C
1
T_A = 25 °C
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
10
T_A = 150 °C
T_A = 125 °C
1
T_A = 100 °C
0.1
0.01
0.001
T_A = 25 °C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
1000
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
V10D120C-M3, V10D120CHM3
Vishay General Semiconductor
100
Junction to Ambient
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Device
50
Epoxy printed circuit
45
board FR4 copper
thickness = 70 μm
40
35
30
25
S (cm²)
20
1
2
3
4
5
6
7
8
9
Copper Pad Areas (cm²)
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
Revision: 27-Nov-14
3
Document Number: 89999
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