V10D120C-M3 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V10D120C-M3, V10D120CHM3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
Reverse current at rated V_R per diode
I_F = 2.5 A
I_F = 5 A
I_F = 2.5 A
I_F = 5 A
V_R = 90 V
V_R = 120 V
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_F ⁽¹⁾
I_R ⁽²⁾
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  5 ms}
TYP.
0.61
0.79
0.53
0.64
2.3
2.3
-
5
MAX.
-
0.94
-
0.72
-
-
500
15
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V10D120C
per diode
3.5
Typical thermal resistance
per device
R_JC
2.5
per device
R_JA ⁽¹⁾⁽²⁾
48
Notes
(1) _{The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA}
(2) _{Free air, without heatsink}
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT
(g)
TO-263AC (SMPD) V10D120C-M3/I
0.55
TO-263AC (SMPD) V10D120CHM3/I ⁽¹⁾
0.55
Note
(1) _{AEC-Q101 qualified}
PACKAGE CODE BASE QUANTITY
DELIVERY MODE
I
2000/reel
13" diameter plastic tape and reel
I
2000/reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
12
R_thJC = 2.5 °C/W
10
8
6
R_thJA = 48 °C/W
4
2
0
0
25
50
75 100 125 150
Case Temperature (°C) (D = duty cycle = 0.5)
Fig. 1 - Forward Current Derating Curve
4.4
4
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
D = 0.5
D = 0.3
D = 0.2
D = 0.1
D = 0.8
D = 1.0
T
D = t_p/T
t_p
1
2
3
4
5
6
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 27-Nov-14
2
Document Number: 89999
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