UGE8HT Datasheet, PDF (3/4 Pages) Vishay Siliconix – Soft recovery characteristics

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UGE8HT, UGE8JT
Vishay General Semiconductor
100
100
10
1
10
0.1
0.01
0.5
T_J = 25 °C max.
Pulse Width = 300 µs
1 % Duty Cycle
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1
0.1
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
10 000
1000
100
T_J = 125 °C
T_J = 100 °C
10
T_J = 25 °C
1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
350
Q_rr
300 ^Trr
I_F = 8.0 A
V_r = 30 V
250
200
240 A/µs
150
100
50 A/µs
50
60 A/µs
50 A/µs
60 A/µs
240 A/µs
0
25
50
75
100
125
150
Junction Capacitance (°C)
Fig. 6 - Reverse Switching Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.113 (2.87)
0.103 (2.62)
0.415 (10.54) MAX.
TO-220AC
0.159 (4.04) DIA.
0.143 (3.64) DIA.
0.260 (6.6)
0.236 (6.0)
1
0.060 (1.50)
0.047 (1.20)
2
0.160 (4.06)
0.140 (3.56)
0.040 (0.84)
0.024 (0.62)
0.20 (5.08)
PIN 1
PIN 2
CASE
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
Revision: 19-Apr-16
3
Document Number: 87926
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