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UGE8HT Datasheet, PDF (2/4 Pages) Vishay Siliconix – Soft recovery characteristics
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UGE8HT, UGE8JT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
UGE8HT
UGE8JT
Max. instantaneous forward voltage (1)
IF = 8 A
IF = 8 A
TJ = 25 °C
TJ = 125 °C
VF
TJ = 25 °C
Max. DC reverse current at VRWM
TJ = 100 °C
IR
TJ = 125 °C
Max. reverse recovery time
IF = 0.5 A, IR = 1.0 A, 
Irr = 0.25 A
trr
IF = 1.0 A, dI/dt = 50 A/μs, 
VR = 30 V, Irr = 0.1 IRM
trr
Typical softness factor (tb/ta)
IF = 8.0 A, dI/dt = 240 A/μs, 
VR = 400 V, Irr = 0.1 IRM
S
Max. reverse recovery current
IF = 8.0 A, dI/dt = 64 A/μs, 
VR = 400 V, TC = 125 °C
IRM
IF = 8.0 A, dI/dt = 240 A/μs, 
VR = 400 V, TC = 125 °C
IRM
Peak forward recovery time
IF = 8.0 A, dI/dt = 64 A/μs, 
VF = 1.1 x VF max.
tfr
1.75
1.50
30
800
4.0
25
50
1.0
5.5
10
500
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
UNIT
V
μA
μA
mA
ns
ns
-
A
A
ns
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UGE8HT
UGE8JT
Typical thermal resistance from junction to case
RJC
2.2
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AC
UGE8HT-E3/45
1.80
PACKAGE CODE BASE QUANTITY DELIVERY MODE
45
50/tube
Tube

RATINGS AND CHARACTERISTCS CURVES (TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
1000
TJ = TJ max.
8.3 ms Single Half Sine-Wave
8
UG8, UGB8
6
100
UG8F
4
2
0
25
50
75
100 125 150 175
Case Temperature (°C)
Fig. 1 - Max. Forward Current Derating Curve
10
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current
Revision: 19-Apr-16
2
Document Number: 87926
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