UGE10BCT Datasheet, PDF (3/5 Pages) Vishay Siliconix – Glass passivated pellet chip junction

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UGE10BCT, UGE10CCT, UGE10DCT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
15
Resistive or Inductive Load
10
5
0
0
50
100
150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
1000
100
T_J = 125 °C
T_J = 100 °C
10
1
T_J = 25 °C
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
100
T_C = 105 °C
8.3 ms Single Half Sine-Wave
10
1
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
100
Pulse Width = 300 μs
1 % Duty Cycle
10
T_J = 125 °C
1
T_J = 100 °C
0.1
T_J = 25 °C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
50
40
at 2 A, 20 A/μs
30
at 1 A, 100 A/μs
20
at 5 A, 50 A/μs
10
at 5 A, 50 A/μs
at 1 A, 100 A/μs
at 2 A, 20 A/μs
0
25
50
75
100
Junction Temperature (°C)
t_rr
Q_rr
125
Fig. 5 - Reverse Switching Characteristics Per Diode
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance Per Diode
Revision: 23-Feb-16
3
Document Number: 87917
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