UGE10BCT Datasheet, PDF (2/5 Pages) Vishay Siliconix – Glass passivated pellet chip junction

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UGE10BCT, UGE10CCT, UGE10DCT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
per diode
Maximum reverse current per diode at
working peak reverse voltage
Maximum reverse recovery time per diode
Maximum reverse recovery time per diode
Maximum stored charge per diode
I_F = 10 A
T_J = 25 °C
I_F = 5 A
T_J = 150 °C
T_J = 25 °C
T_J = 100 °C
I_F = 1.0 A, dI/dt = 100 A/μs, V_R = 30 V, I_rr = 0.1 I_RM
I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
I_F = 2 A, dI/dt = 20 A/μs, V_R = 30 V, I_rr = 0.1 I_RM
Note
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
SYMBOL
V_F ⁽¹⁾
I_R
t_rr
t_rr
Q_rr
VALUE
1.25
1.10
0.895
10
200
25
20
9
UNIT
V
μA
ns
ns
nC
THERMAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL UGE10BCT UGE10CCT UGE10DCT
Typical thermal resistance per diode, junction to ambient
R_JA
50
Typical thermal resistance per diode, junction to case
R_JC
4.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
UGE10DCT-E3/45
1.80
PACKAGE CODE
45
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
Revision: 23-Feb-16
2
Document Number: 87917
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