UG30APT Datasheet, PDF (3/4 Pages) General Semiconductor – ULTRAFAST EFFICIENT PLASTIC RECTIFIER

UG30APT thru UG30DPT
Vishay General Semiconductor
100
10
T_J = 25 °C
1
Pulse Width = 300 µs
1 % Duty Cycle
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
60
I_F = 15 A
V_R = 30 V
50
40
30
20
dI/dt = 150 A/µs
dI/dt = 20 A/µs
dI/dt = 100 A/µs
dI/dt = 50 A/µs
dI/dt = 100 A/µs
dI/dt = 150 A/µs
dI/dt = 50 A/µs
dI/dt = 20 A/µs
10
0
0
25 50 75 100 125 150 175
Junction Temperature (°C)
Figure 5. Reverse Switching Characteristics Per Diode
1000
100
100
T_J = 100 °C
10
T_J = 25 °C
1
0.1
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
10
T_J = 125 °C
f = 1.0 MHz
V_sig = 50 mVp-p
1
0.1
1
10
100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.245 (6.2)
0.225 (5.7)
0.840 (21.3)
0.820 (20.8)
TO-247AD (TO-3P)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30°
0.170
(4.3)
0.142 (3.6)
0.138 (3.5)
10° TYP.
Both Sides
1
2
3
0.160 (4.1)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.117 (2.97)
0.118 (3.0)
0.108 (2.7)
0.078 (1.98) REF.
10
1° REF.
Both Sides
Document Number: 88762
Revision: 05-Jun-08
0.225 (5.7)
0.205 (5.2)
0.048 (1.22)
0.044 (1.12)
0.030 (0.76)
0.020 (0.51)
PIN 1
PIN 3
PIN 2
CASE
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3