UG30APT Datasheet, PDF (2/4 Pages) General Semiconductor – ULTRAFAST EFFICIENT PLASTIC RECTIFIER

UG30APT thru UG30DPT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL UG30APT UG30BPT UG30CPT
Maximum reverse
recovery time
I_F = 0.5 A, I_R = 1.0 A,
I_rr = 0.25 A
t_rr
25
Maximum reverse
recovery time
I_F = 15 A, V_R = 30 V,
dI/dt = 50 A/µs,
I_RR = 10 % I_RM
T_J = 25 °C
T_J = 100 °C
t_rr
35
50
Maximum recovered
stored charge
I_F = 15 A, V_R = 30 V,
dI/dt = 50 A/µs,
I_RR = 10 % I_RM
T_J = 25 °C
T_J = 100 °C
Q_rr
22
50
Typical junction
capacitance
4.0 V, 1 MHz
C_J
70
UG30DPT
UNIT
ns
ns
nC
pF
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL UG30APT UG30BPT UG30CPT
Typical thermal resistance per diode ⁽¹⁾
R_θJC
2.0
Note:
(1) Thermal resistance from junction to case per diode mounted on heatsink
UG30DPT
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-247AD
UG30DPT-E3/45
6.15
PACKAGE CODE BASE QUANTITY DELIVERY MODE
30
30/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
36
Resistive or Inductive Load
30
24
18
12
6
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
1000
100
T_C = 120 °C
8.3 ms Single Half Sine-Wave
10
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88762
[e-mail], [e-mail], [e-mail]
Revision: 05-Jun-08