UG10DCT-E3-45 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual Common Cathode Ultrafast Rectifier

BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
15
Resistive or Inductive Load
10
5
0
0
50
100
150
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
1000
100
10
T_J = 125 °C
T_J = 100 °C
1
T_J = 25 °C
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
100
T_C = 105 °C
8.3 ms Single Half Sine-Wave
10
1
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
100
Pulse Width = 300 µs
1 % Duty Cycle
10
T_J = 125 °C
1
T_J = 100 °C
0.1
T_J = 25 °C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
50
40
at 2 A, 20 A/µs
30
at 5 A, 50 A/µs
at 1 A, 100 A/µs
20
at 5 A, 50 A/µs
10
at 1 A, 100 A/µs
at 2 A, 20 A/µs
0
25
50
75
100
Junction Temperature (°C)
t_rr
Q_rr
125
Figure 5. Reverse Switching Characteristics Per Diode
100
T_J = 125 °C
f = 1.0 MHz
V_sig = 50 mVp-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 88549 For technical questions within your region, please contact one of the following:
Revision: 07-Jan-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
3