UG10DCT-E3-45 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual Common Cathode Ultrafast Rectifier

BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
per diode ⁽¹⁾
I_F = 10 A
I_F = 5 A
I_F = 5 A
T_J = 25 °C
T_J = 25 °C
T_J = 150 °C
Maximum reverse current per diode at
working peak reverse voltage
T_J = 25 °C
T_J = 100 °C
Maximum reverse recovery time per diode I_F = 1.0 A, dI/dt = 100 A/µs, V_R = 30 V, I_rr = 0.1 I_RM
Maximum reverse recovery time per diode I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
Maximum stored charge per diode
I_F = 2 A, dI/dt = 20 A/µs, V_R = 30 V, I_rr = 0.1 I_RM
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
SYMBOL
V_F
I_R
t_rr
t_rr
Q_rr
VALUE
1.25
1.10
0.895
10
200
25
20
9
UNIT
V
µA
ns
ns
nC
THERMAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UG10
BYQ28E
Typical thermal resistance per diode, junction to ambient
Typical thermal resistance per diode, junction to case
R_θJA
50
R_θJC
4.5
UGF10
BYQ28EF
55
6.7
UGB10
BYQ28EB
50
4.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
BYQ28E-200-E3/45
1.80
ITO-220AB
BYQ28EF-200-E3/45
1.95
TO-263AB
BYQ28EB-200-E3/45
1.77
TO-263AB
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
BYQ28EB-200-E3/81
BYQ28E-200HE3/45 ⁽¹⁾
BYQ28EF-200HE3/45 ⁽¹⁾
BYQ28EB-200HE3/45 ⁽¹⁾
BYQ28EB-200HE3/81 ⁽¹⁾
1.77
1.80
1.95
1.77
1.77
Note:
(1) Automotive grade AEC Q101 qualified
PACKAGE CODE
45
45
45
81
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape reel
Tube
Tube
Tube
Tape reel
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88549
[e-mail], [e-mail], [e-mail]
Revision: 07-Jan-08