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UFL200FA60P Datasheet, PDF (3/8 Pages) Vishay Siliconix – Insulated Ultrafast Rectifier Module, 200 A
Insulated Ultrafast
Rectifier Module, 200 A
UFL200FA60P
Vishay Semiconductors
1000
100
Tj = 175°C
10
Tj = 125°C
1000
100
10
175°C
125°C
1
0.1
25°C
0.01
0.001
100 200 300 400 500 600
Reverse Voltage - VR (V)
Fig. 1 - Typical Values of Reverse Current vs.
Reverse Voltage
10000
T J= 25˚C
1000
Tj = 25°C
100
1
0.0
0.5
1.0
1.5
2.0
2.5
Forward Voltage Drop - VF (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
1
10
10
100
1000
Reverse Voltage - VR (V)
Fig. 2 - Typical Junction Capacitance vs. Reverse Voltage
PDM
0.1
t1
Single Pulse
(Thermal Resistance)
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.0001
0.001
0.01
0.1
1
10
t 1, Rectangular Pulse Duration (Seconds)
Fig. 3 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode)
Document Number: 94551 For technical questions within your region, please contact one of the following:
Revision: 21-Jul-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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