UFL200FA60P Datasheet, PDF (2/8 Pages) Vishay Siliconix – Insulated Ultrafast Rectifier Module, 200 A

UFL200FA60P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 200 A
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode breakdown voltage V_BR
Forward voltage
V_FM
Reverse leakage current
I_RM
Junction capacitance
C_T
I_R = 100 μA
I_F = 100 A
I_F = 200 A
I_F = 100 A, T_J = 125 °C
I_F = 200 A
V_R = V_R rated
T_J = 175 °C, V_R = V_R rated
V_R = 600 V
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.28
1.48
1.13
1.37
5
0.2
80
MAX.
-
1.44
1.66
1.24
1.55
100
1
-
UNITS
V
μA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Reverse recovery time
Peak recovery current
Reverse recovery charge
t_rr
I_RRM
Q_rr
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
-
I_F = 50 A
-
V_R = 200 V
dI_F/dt = 200 A/μs
-
-
-
TYP.
102
210
9
21
443
2086
MAX.
141
293
12
25
744
3355
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case,
single leg conducting
Junction to case,
both leg conducting
R_thJC
Case to heatsink
R_thCS
Flat, greased surface
Weight
Mounting torque
MIN.
-
TYP.
-
MAX. UNITS
0.5 °C/W
-
-
0.25
K/W
-
0.05
-
-
30
-
g
-
1.3
-
Nm
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For technical questions within your region, please contact one of the following: Document Number: 94551
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Revision: 21-Jul-10