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UFB200FA60P_10 Datasheet, PDF (3/8 Pages) Vishay Siliconix – Insulated Ultrafast Rectifier Module, 200 A
1000
100
Tj = 175°C
10
Insulated Ultrafast
Rectifier Module, 200 A
UFB200FA60P
Vishay Semiconductors
Tj = 125°C
1000
100
10
175°C
125°C
1
0.1
25°C
0.01
0.001
100 200 300 400 500 600
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
Tj = 25°C
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Forward Voltage Drop - VF (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
1
D = 0.5
D = 0.75
D = 0.33
D = 0.25
D = 0.2
0.1
Single Pulse
(Thermal Resistance)
10
10
100
1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
0.01
1E-03
1E-02
1E-01
1E+00
t 1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode)
Document Number: 94566 For technical questions within your region, please contact one of the following:
Revision: 22-Jul-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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